FDS6930A mosfet equivalent, dual n-channel mosfet.
5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 5 nC).
High performance trench technology for .
where low in-line power loss and fast switching are required.
Features 5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(.
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suite.
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